The maximum deposition rate of amorphous silicon is between 7 to 24 cm^3 per minute.
Silane is an inorganic colorless toxic compound with a chemical formula SiH4. It is a precursor element of silicon. Because of the greater electronegativity of hydrogen in comparison to silicon, this Si–H bond polarity is the opposite of that in the C–H bonds of methane.
Above 420 °C, silane decomposes into silicon and hydrogen; it can therefore be used in the chemical vapor deposition of silicon. The Si–H bond strength is around 384 kJ/mol, which is about 20% weaker than the H–H bond in H 2. Consequently, compounds containing Si–H bonds are much more reactive than is H 2.
Silane is a molecule of one central silicon atom with four attachments. The attachments can be any combination of organic or inorganic groups. Amorphous silicon (α-Si) was deposited on glass substrates by PECVD at different deposition conditions in order to characterize the residual stress on the film. Thus, the deposition rate varies from 7 to 24.
Learn more about electronegativity at,
https://brainly.com/question/1163776
#SPJ4
