Answer:
Explanation:
Since we are considering electron and hole drift velocities, then electric field E will have to be taken into consideration as well.
Where E = V/d...... 1
Drift velocity (u) = -μE. For electron.... 2
Drift velocity (v) = μE. For hole...... 3
Given that : V = 5V and d = 10 um (micro meter)
From equation 1
E = V/d
E = 5V/10×10^-4cm
E = 5V ÷1/1000
E = 5×1000
E = 5000v/cm
From equation 2
Un = -μE.
Un = - 1350cm^2/vs × 5000
= -6750000cm/s
From equation 3
Vp = μE
= 480cm^2/vs × 5000
= 2400000cm/s
Since it was stated in the question that we should contrast between hole drift and electron drift.
6750000/2400000
= 2.8125
Hence the electron drift velocity is 2.8 times that of hole drift velocity indicating that the speed of the electron through the silicon was faster.
