A parallel-plate capacitor is constructed from a layer of silicon dioxide of thickness 1.1 × 10−5 m between two conducting films. The dielectric constant of silicon dioxide is 3.8 and its dielectric strength is 8 × 106 V/m. The permittivity of free space is 8.85 × 10−12 C 2 /N · m2 . What voltage can be applied across this capacitor without dielectric breakdown? Answer in units of V.
