Consider an Si pnp transistor with Ne=2x107cm"", Ne=2x106cm, Nc=2x1015 cm. The metallurgical base width is 1 pm. Assume the critical field to be equal to 105 V/cm. 1.5x1010cm-3, es = 11.7 x 8.85x10-14F/cm
a) Draw the energy band diagram under thermal equilibrium.
b) Sketch the electric field and charge density across the two depletion regions.
c) For Ves = 0.7V, Vec = 4.0V, determine the operating region and draw the minority carrier densities across the emitter, base, and collector regions.
d) Determine the punch-through voltage (neglect the emitter-base depletion width).
e) Determine the common-base breakdown voltage.
